View IRF1312LPBF_781845.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD- 95409A
Applications
l l l l
HEXFET(R) Power MOSFET
IRF1312PbF IRF1312SPbF IRF1312LPBF ID
95A
High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free
VDSS
80V
RDS(on) max
10m
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
TO-220AB IRF1312
D2Pak IRF1312S
TO-262 IRF1312L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
95 67 380 3.8 210 1.4 20 5.1 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA RJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) are on page 11
Typ.
--- 0.50 --- ---
Max.
0.75 --- 62 40
Units
C/W
www.irf.com
1
12/23/04
IRF1312/S/LPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 --- --- 3.5 --- --- --- --- Typ. --- 0.078 6.6 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 10 m VGS = 10V, ID = 57A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 76V, VGS = 0V A 250 VDS = 64V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 92 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 93 36 34 25 130 47 51 5450 550 340 1910 380 620 Max. Units Conditions --- S VDS = 25V, ID = 57A 140 ID = 57A --- nC VDS = 40V --- VGS = 10V, --- VDD = 40V --- ID = 57A ns --- RG = 4.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 64V, = 1.0MHz --- VGS = 0V, V DS = 0V to 64V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
250 57 21
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 95 showing the A G integral reverse --- --- 380 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 57A, VGS = 0V --- 64 96 ns TJ = 25C, IF = 57A --- 150 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF1312/S/LPbF
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
10
1
10
0.1
5.0V 20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
5.0V
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.5
ID, Drain-to-Source Current (A)
100.00
T J = 175C
RDS(on) , Drain-to-Source On Resistance
ID = 95A VGS = 10V
2.0
T J = 25C
1.00
(Normalized)
10.00
1.5
0.10
1.0
0.01 5 6 7
VDS = 25V 20s PULSE WIDTH
8 9 10
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF1312/S/LPbF
100000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
ID= 57A
C ds
16
VDS= 64V VDS= 40V VDS= 16V
C, Capacitance (pF)
10000
12
Ciss
8
1000
Coss Crss
4
FOR TEST CIRCUIT SEE FIGURE 13
0
100 1 10 100
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0
T J = 175C
100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10
10.0
1.0
T J = 25C
10msec
0.1 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6 1.8
0.1 100 1000 VDS , Drain-toSource Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF1312/S/LPbF
100 LIMITED BY PACKAGE 80
ID , Drain Current (A)
VDS VGS RG
RD
D.U.T.
+
-VDD
60
V GS
40
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.20
Thermal Response
0.1
0.10 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 0.1
0.05
0.02 0.01
J = P DM x Z thJC
0.01 0.00001
0.0001
0.001
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF1312/S/LPbF
15V
500
ID TOP 23A 40A 57A
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
400
BOTTOM
300
A
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
0 25 50 75 100 125 150 175
Starting TJ, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF1312/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
www.irf.com
7
IRF1312/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
8
www.irf.com
IRF1312/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" Note: "P" in assembly line pos ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
OR
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE
www.irf.com
9
IRF1312/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY L OT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
OR
INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DE S IGNAT ES L EAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S E MBL Y S IT E CODE
10
www.irf.com
IRF1312/S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.15mH
R G = 25, IAS = 57A. (See Figure 12)
ISD 57A, di/dt 410A/s, VDD V(BR)DSS,
T J 175C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
TO-220AB package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
www.irf.com
11

▲Up To Search▲

Price & Availability of IRF1312LPBF

	To Download IRF1312LPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .